to ? 92 1.emitter 2.collector 3.base jiangsu changjiang electronics technology co., ltd to-92 plastic-encapsulate transistors KTA1271 transistor (pnp) features high dc current gain complementary to ktc3203 www . cj- ele c . c om 1 , , 201 colle c tor - base voltage - 35 v colle c tor - emitter voltage - 30 v emitter - base voltage - 5 v colle c tor current - continuous - 800 ma colle c tor po w e r dissipation 625 mw jun c tion te mperature 1 st orage t empe rature - 55
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rom jun c tion o ambient / w equivalent circuit 1 !" # " $ # " % $& ' ("
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www.cj-elec.com && parameter symbol test conditions min typ max unit co llector-base breakdown voltage v (br)cbo i c = - 0 . 1 m a ,i e =0 - 35 v co llector-emitter breakdown voltage v (br) ceo i c = - 10 m a,i b = 0 - 30 v emitter-b ase breakdown voltage v (br)ebo i e = - 0 . 1 m a,i c =0 - 5 v co llector cut-off current i cbo v cb = - 35v,i e =0 - 0 . 1 a co llector cut-off current i ceo v ce = - 25v,i b =0 - 0 . 2 a emitter cut-off current i ebo v eb = - 5 v,i c =0 - 0 . 1 a h fe(1) v ce = - 1 v, i c = - 100 m a 100 320 dc cu rrent gain h fe(2) v ce = - 1 v, i c = - 700 m a 35 co llector-emitter saturation voltage v ce(sat) i c = - 500 m a,i b = - 20 m a - 0 . 7 v base-emitter v oltage v be v ce = - 1 v, i c = - 1 0 m a - 0 . 8v tra nsition frequency f t v ce = - 5 v,i c = - 10 m a 120 mhz colle ctor output capacitance c o b v cb = - 10v, i e =0, f=1mhz 19 pf classification of h fe(1) ra nk o y ra nge 100 - 200 160 - 320 a t =25 unless otherwise specified
-0.1 -1 -10 1 10 100 1000 -200 -400 - 600 -800 -1000 -1200 -0.1 -1 -10 -100 0 25 50 75 100 125 150 0 125 250 375 500 625 750 875 1000 -1 -10 -10 0 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -1100 -1200 -1300 -1400 -1 -10 -10 0 -10 -100 -1000 -1 -10 -100 10 100 1000 -0.0 -0.5 -1.0 -1.5 -2.0 -2 .5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 capacitance c (p f) reverse voltag e v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ? ? -30 t a =1 0 0 t a =2 5 collcetor current i c (ma) base-emm iter voltage v be (mv) i c v be commo n emitter v ce =-1v collecto r power dissipation p c (mw) ambient t emperature t a ( ) p c ? ? t a -800 -800 -800 -800 ? ? base-emitt er saturation voltage v besat (mv) collector current i c (ma) =25 t a =100 t a =25 i c v besat ? ? collector-emitter saturation voltag e v ce s a t (mv) collector current i c (ma) i c v cesat ? ? t a =100 t a =25 =25 dc current gain h fe collector current i c (ma) common emitter v ce =-1v t a =25 t a =100 i c h fe ?? -1ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma -0.2ma i b =-0.1ma collector current i c (a) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic www . cj - elec . c om . , , 20 typical characteristics
a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d4. . 4.700 / 0 / 1 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e 1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 1.270 typ 0.050 typ 222/$3$/$ # 4 &&
7 d s h d q g 5 h h o z z z f m h o h f f r p &&
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